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STW11NK100Z STW13NK100Z
N-channel 1000V - 0.56 - 13A - TO-247 Zener - Protected SuperMESHTM PowerMOSFET
General features
Type STW13NK100Z

VDSS (@Tjmax) 1000 V
RDS(on)
ID
PW
< 0.70 13 A 350W
Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility
TO-247
Description
The SuperMESHTM series is obtained through an extreme optimization of ST's well established strip-based PowerMESHTM layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmeshTM products.
Internal schematic diagram
Applications
Switching application
Order codes
Part number STW13NK100Z Marking W13NK100Z Package TO-247 Packaging Tube
August 2006
Rev 5
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Contents
STW13NK100Z
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1 Protection features of gate-to-source zener diodes . . . . . . . . . . . . . . . . . . 4
2
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2.1 Electrical characteristics (curves) ............................ 7
3 4 5
Test circuit
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
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STW13NK100Z
Electrical ratings
1
Electrical ratings
Table 1.
Symbol VDS VDGR VGS ID ID IDM(1) PTOT
Absolute maximum ratings
Parameter Drain-source voltage (VGS = 0) Drain-gate voltage (RGS = 20K) Gate-source voltage Drain current (continuous) at TC = 25C Drain current (continuous) at TC=100C Drain current (pulsed) Total dissipation at TC = 25C Derating Factor Value 1000 1000 30 13 8.2 52 350 2.7 6000 4 -55 to 150 Unit V V V A A A W W/C V V/ns C
VESD (G-S) dv/dt TJ Tstg
(2)
Gate source ESD(HBM-C=100pF, R=1,5K) Peak diode recovery voltage slope Operating junction temperature Storage temperature
1. Pulse width limited by safe operating area 2. ISD 8.3 A, di/dt 200A/s, VDD V(BR)DSS, Tj TJMAX
Table 2.
Symbol Rthj-case Rthj-a Tl
Thermal data
Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 0.36 50 300 Unit C/W C/W C
Table 3.
Symbol IAR EAS
Avalanche characteristics
Parameter Avalanche current, repetitive or not-repetitive (pulse width limited by Tj Max) Single pulse avalanche energy (starting Tj=25C, Id=Iar, Vdd=50V) Value 13 700 Unit A mJ
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Electrical ratings
STW13NK100Z
Table 4.
Symbol BVGSO
Gate-source zener diode
Parameter Test conditions Min. 30 Typ. Max. Unit V
Gate-source breakdown voltage Igs= 1mA (Open Drain)
1.1
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device's ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device's integrity. These integrated Zener diodes thus avoid the usage of external components.
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STW13NK100Z
Electrical characteristics
2
Electrical characteristics
(TCASE=25C unless otherwise specified) Table 5.
Symbol V(BR)DSS
On/off states
Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Test conditions ID = 1mA, VGS= 0 VDS = Max rating, VDS = Max rating, Tc = 125C Min. 1000 1 10
10
Typ.
Max.
Unit V A A A V
IDSS
IGSS VGS(th) RDS(on)
Gate body leakage current VGS = 20V (VGS = 0) Gate threshold voltage Static drain-source on resistance VDS = VGS, ID = 150 A VGS = 10V, ID = 6.5 A 3 3.75 0.56
4.5 0.70
Table 6.
Symbol gfs (1) Ciss Coss Crss Cosseq(2). td(on) tr td(off) tf Qg Qgs Qgd
Dynamic
Parameter Test conditions Min. Typ. 14 6000 455 100 227 45 35 145 45 190 30 100 266 Max. Unit S pF pF pF pF ns ns ns ns nC nC nC
Forward transconductance VDS =15V, ID = 6.5 A Input capacitance Output capacitance Reverse transfer capacitance Equivalent output capacitance Turn-on delay time Rise time Off-voltage rise time Fall time Total gate charge Gate-source charge Gate-drain charge
VDS =25V, f=1 MHz, VGS=0
VGS=0, VDS =0V to 800V VDD=500 V, ID= 7A, RG=4.7, VGS=10V (see Figure 16) VDD=800V, ID = 13A VGS =10V
1. Pulsed: pulse duration=300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS
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Electrical characteristics
STW13NK100Z
Table 7.
Symbol ISD ISDM VSD
(1) (2)
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD=8.3A, VGS=0 ISD=13 A, di/dt = 100A/s, VDD=100 V, Tj=25C (see Figure 18) ISD=13 A, di/dt = 100A/s, VDD=100V, Tj=150C (see Figure 18) 820 12.7 31 1050 17.8 34 Test conditions Min Typ. Max 13 52 1.6 Unit A A V ns C A ns C A
trr Qrr IRRM trr Qrr IRRM
1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300s, duty cycle 1.5%
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STW13NK100Z
Electrical characteristics
2.1
Figure 1.
Electrical characteristics (curves)
Safe operating area Figure 2. Thermal impedance
Figure 3.
Output characterisics
Figure 4.
Transfer characteristics
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Electrical characteristics Figure 5. Transconductance Figure 6.
STW13NK100Z Static drain-source on resistance
Figure 7.
Gate charge vs gate-source voltage Figure 8.
Capacitance variations
Figure 9.
Normalized gate threshold voltage vs temperature
Figure 10. Normalized on resistance vs temperature
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STW13NK100Z Figure 11. Source-drain diode forward characteristics
Electrical characteristics Figure 12. Normalized BVDSS vs temperature
Figure 13. Maximum avalanche energy vs temperature
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Test circuit
STW13NK100Z
3
Test circuit
Figure 15. Unclamped Inductive waveform
Figure 14. Unclamped Inductive load test circuit
Figure 16. Switching times test circuit for resistive load
Figure 17. Gate charge test circuit
Figure 18. Test circuit for inductive load switching and diode recovery times
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STW13NK100Z
Package mechanical data
4
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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Package mechanical data
STW13NK100Z
TO-247 MECHANICAL DATA
mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.079 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620
DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S
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STW13NK100Z
Revision history
5
Revision history
Table 8.
Date 22-Jun-2004 09-Sep-2004 28-Jan-2005 18-Sep-2005 01-Aug-2006
Revision history
Revision 1 2 3 4 5 Target document Preliminary document Complete version with curves Figure 12 changed New template, no content change Changes
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STW13NK100Z
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